R07DS0723EJ0100

Rev.1.00

Page 1 of 5

Mar 30, 2012

Data Sheet

N0500S

NPN SILICON EPITAXIAL TRANSISTOR

FEATURES

 Complements to N0500R.

 V

 I

 Miniature package SOT-23F (2SD1000: Package variation of 3pPoMM)

PRODUCT LINEUP

Part Number

Packing

Package Name

Package Code

Mass [TYP.]

N0500S-T1-AT

Tape 3000p/reel

SOT-23F

PVSF0003ZA-A

0.0126g

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

60

V

Collector to Emitter Voltage

50

V

Emitter to Base Voltage

5.0

V

Collector Current (DC)

0.7

A

Collector Current (pulse) *

1

1.0

A

Total Power Dissipation

0.2

W

Total Power Dissipation *

2

1.0

W

Junction Temperature

150

C

Storage Temperature

55 to 150

C

Note

*1. PW

 10 ms, Duty Cycle  50%

*2. FR-4 board size 2500 mm

2

 1.6 mm, t  5 sec

Parameter

Symbol

Condition

MIN.

TYP.

MAX.

Unit

Collector Cutoff Current

100

nA

Emitter Cutoff Current

100

nA

DC Current Gain

1

90

200

400

DC Current Gain

1

50

150

Collector Saturation Voltage

1

0.12

0.4

V

Base Saturation Voltage

1

0.9

1.2

V

Base to Emitter Voltage

1

600

635

700

mV

Gain Bandwidth Product

80

MHz

Output Capacitance

10

pF

Note

*1. Pulsed

Marking

LM

LL

LK

hFE1

90 to 180

135 to 270

200 to 400

R07DS0723EJ0100

Rev.1.00

Mar 30, 2012