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TTC009 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # TTC009
Description  TOSHIBA Transistor Silicon NPN Epitaxial Type
PDF  5 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TTC009 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TTC009
2010-07-07
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 160 V, IE = 0
-
-
100
nA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
-
-
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
80
-
-
V
hFE (1)
VCE = 2 V, IC = 1 mA
80
-
-
hFE (2)
VCE = 2 V, IC = 0.5 A
100
-
200
DC current gain
hFE (3)
VCE = 2 V, IC = 1 A
60
-
-
-
VCE (sat) (1)
IC = 0.5 A, IB = 50 mA
-
-
0.3
V
Collector-emitter saturation voltage
VCE (sat) (2)
IC = 1 A, IB = 100 mA
-
-
0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 1 A, IB = 100 mA
-
-
1.5
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
-
150
-
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0,f = 1MHz
-
14
-
pF
Rise time
tr
-
0.05
-
Storage time
tstg
-
0.4
-
Switching time
Fall time
tf
IB1 = IB2 = 100 mA
Duty cycle
≤ 1%
-
0.15
-
μs
Marking
Note 2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
20 μs
VCC ≈ 24 V
Output
IB2
IB1
Input
C009
Part No. (or abbreviation code)
Lot No.
Note 2
0



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