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TTC009 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TTC009 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page ![]() TTC009 2010-07-07 2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit Collector cut-off current ICBO VCB = 160 V, IE = 0 - - 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 - - 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 80 - - V hFE (1) VCE = 2 V, IC = 1 mA 80 - - hFE (2) VCE = 2 V, IC = 0.5 A 100 - 200 DC current gain hFE (3) VCE = 2 V, IC = 1 A 60 - - - VCE (sat) (1) IC = 0.5 A, IB = 50 mA - - 0.3 V Collector-emitter saturation voltage VCE (sat) (2) IC = 1 A, IB = 100 mA - - 0.5 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 100 mA - - 1.5 V Transition frequency fT VCE = 2 V, IC = 0.5 A - 150 - MHz Collector output capacitance Cob VCB = 10 V, IE = 0,f = 1MHz - 14 - pF Rise time tr - 0.05 - Storage time tstg - 0.4 - Switching time Fall time tf IB1 = IB2 = 100 mA Duty cycle ≤ 1% - 0.15 - μs Marking Note 2: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 20 μs VCC ≈ 24 V Output IB2 IB1 Input C009 Part No. (or abbreviation code) Lot No. Note 2 0 |
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