Electronic Components Datasheet Search
  English  ▼

X  

Preview PDF HTML

IRLHM620PBF Datasheet(PDF) 2 Page - International Rectifier

Part # IRLHM620PBF
Description  HEXFETPower MOSFET
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRLHM620PBF Datasheet(HTML) 2 Page - International Rectifier

  IRLHM620PBF Datasheet HTML 1Page - International Rectifier IRLHM620PBF Datasheet HTML 2Page - International Rectifier IRLHM620PBF Datasheet HTML 3Page - International Rectifier IRLHM620PBF Datasheet HTML 4Page - International Rectifier IRLHM620PBF Datasheet HTML 5Page - International Rectifier IRLHM620PBF Datasheet HTML 6Page - International Rectifier IRLHM620PBF Datasheet HTML 7Page - International Rectifier IRLHM620PBF Datasheet HTML 8Page - International Rectifier  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
IRLHM620PbF
2
www.irf.com
S
D
G
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC (Bottom)
Junction-to-Case f
–––
3.4
RθJC (Top)
Junction-to-Case
f
–––
37
°C/W
RθJA
Junction-to-Ambient g
–––
46
RθJA (<10s)
Junction-to-Ambient
g
–––
31
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
5.4
–––
mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
2.0
2.5
–––
2.7
3.5
VGS(th)
Gate Threshold Voltage
0.5
0.8
1.1
V
∆VGS(th)
Gate Threshold Voltage Coefficient
–––
-4.3
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
58
–––
–––
S
Qg
Total Gate Charge
–––
52
78
VDS = 10V
Qgs
Gate-to-Source Charge
–––
6.3
–––
Qgd
Gate-to-Drain Charge
–––
25
–––
RG
Gate Resistance
–––
2.6
–––
Ω
td(on)
Turn-On Delay Time
–––
7.5
–––
tr
Rise Time
–––25–––
td(off)
Turn-Off Delay Time
–––
57
–––
tf
Fall Time
–––37–––
Ciss
Input Capacitance
–––
3620
–––
Coss
Output Capacitance
–––
900
–––
Crss
Reverse Transfer Capacitance
–––
620
–––
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
™
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.2
V
trr
Reverse Recovery Time
–––
41
62
ns
Qrr
Reverse Recovery Charge
–––
68
100
nC
ton
Forward Turn-On Time
Time is dominated by parasitic Inductance
VDS = VGS, ID = 50µA
VGS = 2.5V, ID = 20A e
Typ.
m
Ω
VDD = 10V, VGS = 4.5V
–––
RG=1.0Ω
VDS = 10V, ID = 20A
VDS = 16V, VGS = 0V, TJ = 125°C
µA
ID = 20A (See Fig.17 & 18)
ID = 20A
VGS = 0V
VDS = 10V
VDS = 16V, VGS = 0V
TJ = 25°C, IF = 20A, VDD = 10V
di/dt = 220A/µs
eÃ
TJ = 25°C, IS = 20A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
Conditions
See Fig.15
Max.
120
20
ƒ = 1.0MHz
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 20A
e
–––
–––
160
–––
–––
40
MOSFET symbol
nA
ns
A
pF
nC
VGS = 4.5V
–––
VGS = 12V
VGS = -12V



Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com