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2SC3583 Datasheet(PDF) 6 Page - Renesas Technology Corp

Part # 2SC3583
Description  MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
PDF  10 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC3583 Datasheet(HTML) 6 Page - Renesas Technology Corp

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2SC3583
S-PARAMETER
50
00
60
70
80
90
100
110
120
130
0.32
0.18
0.34
0.16
0.36
0.14
0.38
0.12
0.40
0.10
0.42
0.08
0.17
0.15
0.13
0.11
0.09
0.07
0.33
0.35
0.37
0.39
0.41
0.43
50
10
6.0
4.0
3.0
0.2
0.4
0.6
0.8
1.0
0.3
0.2
0.1
0.2
0.8
0.6
0.4
0.4
REACTANCE COMPONENT
(
R
––––
ZO )
EN
T
20
S11e, S22e-FREQUENCY
S21e-FREQUENCY
90
°
0
°
30
°
−30°
60
°
−60°
180
°
150
°
−150°
120
°
−120°
−90°
4
0
8
12
16
20
S21e
0.2 GHz
0.2 GHz
IC = 5 mA
IC = 20 mA
90
°
0
°
30
°
−30°
60
°
−60°
180
°
150
°
−150°
120
°
−120°
−90°
0.04
0
0.08
0.12
0.16 0.20
S12e
2.0 GHz
IC = 20 mA
IC = 5 mA
S12e-FREQUENCY
VCE = 8 V
200 MHz Step
CONDITION
VCE = 8 V
CONDITION
VCE = 8 V
CONDITION
2.0 GHz
2.0 GHz
0.2 GHz
0.2 GHz
IC = 20 mA
IC = 5 mA
IC = 5 mA
S11e
S22e
IC = 20 mA
0.2 GHz



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