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2SC5013 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # 2SC5013
Description  NPN EPITAXIAL SILICON RF TRANSISTOR
PDF  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5013 Datasheet(HTML) 4 Page - Renesas Technology Corp

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Data Sheet PU10518EJ01V0DS
2
2SC5013
ELECTRICAL CHARACTERISTICS (TA = +25
°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 10 V, IE = 0 mA
−
−
1.0
µA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
−
−
1.0
µA
DC Current Gain
hFE
Note 1
VCE = 6 V, IC = 10 mA
50
100
250
−
RF Characteristics
Gain Bandwidth Product
fT
VCE = 6 V, IC = 10 mA
−
10
–
GHz
Insertion Power Gain
S21e2 VCE = 6 V, IC = 10 mA, f = 2.0 GHz
7.5
9.5
−
dB
Noise Figure
NF
VCE = 6 V, IC = 5 mA, f = 2.0 GHz
−
1.8
3.0
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 10 V, IE = 0 mA, f = 1.0 MHz
−
0.25
0.8
pF
Notes 1. Pulse measurement: PW
≤ 350
µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
EB
FB
GB
Marking
R46
R47
R48
hFE Value
50 to 100
80 to 160
125 to 250



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