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L9958XP Datasheet(PDF) 21 Page - STMicroelectronics

Part # L9958XP
Description  Low RDSON SPI controlled H-Bridge
PDF  38 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L9958XP Datasheet(HTML) 21 Page - STMicroelectronics

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L9958
Diagnostics and protections
Doc ID 17269 Rev 5
21/38
This disable the turning on of the low-side drivers during current recirculation. The current
flows through the body diode of the low-side MOS for a fixed time. At the end of this fixed
time the Vout voltage is sampled and the possible open load condition detected (see
Figure 16).
Figure 16.
Open load in on state - Low-side current recirculation
5.2.5
Over-temperature
When Twarn is reached, thermal current reduction is activated, and the information is stored
and latched. When Tsd is reached, the “TSD” bit is set and all output transistors are put in
tri-state conditions as long as a reset is applied.
5.2.6
Vs under-voltage shutdown
If the supply-voltage at the VS pins falls below the under-voltage detection threshold
Vs_uv_off, the outputs are set to tri-state and the error bit "Undervoltage at VS" is set.
A filtering time "Tuv_Vs" is implemented to avoid unwanted detection due to parasitic
glitches. The information is transferred into the SPI register in a bit called "VS_UV". This bit
is NOT latched. As soon as the voltage rises again above the Vs under-voltage threshold
(hysteresis implemented), the bridge is switched back to normal mode driven by DIR and
PWM. All the settings are kept as before the under-voltage event.
Table 12.
Over-temperature
TSD
Comments
Bridge state
FSI
1
Tj > TSD
Tri-state-
1
0 (default)
Tj < TSD
-
0



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