STF5NK52ZD datasheet(4/17 Pages) STMICROELECTRONICS

Part #	STF5NK52ZD

Description	N-channel 520 V,1.22 Ω,4.4 A,TO-220,IPAK,I2PAK,DPAK,TO-220FP Zener-protected SuperMESH™ Power MOSFET

PDF	17 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 17 page

Electrical characteristics

STB5NK52ZD-1, STD/F/P5NK52ZD

4/17

Electrical characteristics

(Tcase =25°C unless otherwise specified)

Table 5.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

520

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

± 10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 50 µA

2.5

3.75

4.5

RDS(on

Static drain-source on

resistance

VGS = 10 V, ID = 2.2 A

1.22

1.5

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

Forward

transconductance

VDS = 15 V, ID = 2.2 A

3.1

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz, VGS = 0

529

13.4

COSS eq

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 416 V

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 416 V, ID = 4.4 A,

VGS = 10 V

(see

Figure 19)

16.9

4.2

8.4

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