IRFS730B datasheet(3/9 Pages) KERSEMI

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GS = 20V

GS = 10V

※ Note : T

J = 25

℃

D, Drain Current [A]

-1

150

-55

※ Notes :

1. V

DS = 40V

2. 250μ s Pulse Test

GS, Gate-Source Voltage [V]

-1

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom:

5.0 V

※ Notes :

1. 250μ s Pulse Test

2. T

C = 25

℃

DS, Drain-Source Voltage [V]

DS = 200V

DS = 80V

DS = 320V

※ Note : I

D = 5.5 A

G, Total Gate Charge [nC]

-1

500

1000

1500

2000

oss

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

※ Notes :

1. V

GS = 0 V

2. f = 1 MHz

rss

iss

DS, Drain-Source Voltage [V]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-1

150℃

※ Notes :

1. V

GS = 0V

2. 250μ s Pulse Test

25℃

SD, Source-Drain voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

IRFS730B Datasheet(PDF) 3 Page - Kersemi Electronic Co., Ltd.

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