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GF1A Datasheet(PDF) 1 Page - Vishay Siliconix |
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GF1A Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() GF1A, GF1B, GF1D, GF1G, GF1J, GF1K, GF1M www.vishay.com Vishay Semiconductors Revision: 14-Aug-13 1 Document Number: 88617 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Ideal for automated placement • Low forward voltage drop • Low leakage current • High forward surge capability • Meets environmental standard MIL-S-19500 • Meets MSL level 1, per J-STD-020, LF maximum peak of 250 °C • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. MECHANICAL DATA Case: DO-214BA, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 μA TJ max. 175 °C Package DO-214BA (GF1) Diode variations Single die DO-214BA (GF1) SUPERECTIFIER ® MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GF1A GF1B GF1D GF1G GF1J GF1K GF1M UNIT Device marking code GA GB GD GG GJ GK GM Max. repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Max. RMS voltage VRMS 35 70 140 280 420 560 700 V Max. DC blocking voltage VDC 50 100 200 400 600 800 1000 V Max. average forward rectified current at TL = 125 °C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C |
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