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IRF7809A/IRF7811A

Parameter

Min

Typ

Max

Min

Typ

Max Units

Conditions

Diode Forward

V

SD

1.0

1.0

V

I

Voltage*

Reverse Recovery

Q

rr

94

82

nC

di/dt ~ 700A/µs

V

Reverse Recovery

Q

rr(s)

87

74

di/dt = 700A/µs

Charge (with Parallel

(with 10BQ040)

Schottky)

„

V

Parameter

Min

Typ

Max

Min

Typ

Max Units

Conditions

Drain-to-Source

BV

DSS

30

–

–

28

–

–

V

V

Breakdown Voltage*

Static Drain-Source

R

DS(on)

7

8.5

10

12

m

Ω V

on Resistance*

Gate Threshold Voltage*

V

GS(th)

1.0

1.0

V

V

Drain-Source Leakage

I

DSS

30

30

µA

V

Current*

150

150

V

Tj = 100°C

Gate-Source Leakage

I

GSS

±100

±100

nA

V

Current*

Total Gate Chg Cont FET*

Q

G

61

75

19

23

V

Total Gate Chg Sync FET*

Q

G

55

73

17

20.5

V

Pre-Vth

Q

GS1

14

2.7

V

Gate-Source Charge

Post-Vth

Q

GS2

3.5

1.3

nC

Gate-Source Charge

Gate to Drain Charge

Q

GD

13.5

4.5

Switch Chg(Q

Q

sw

17

22.5

5.8

7.0

Output Charge*

Q

oss

25

30

26

31

V

Gate Resistance

R

G

1.1

1.8

Ω

Turn-on Delay Time

t

d (on)

19

8

V

Rise Time

t

r

94

ns

V

GS

= 5V

Turn-off Delay Time

t

d (off)

32

16

Clamped Inductive Load

Fall Time

t

f

12

8

Input Capacitance

C

iss

–

7300

–

–

1800

–

Output Capacitance

C

oss

–

900

–

–

900

–

pF

V

Reverse Transfer Capacitance C

rss

–

350

–

–

60

–

Electrical Characteristics

Source-Drain Rating & Characteristics

IRF7809A

IRF7811A

Current*

Charge

„

Notes:



Repetitive rating; pulse width limited by max. junction temperature.

‚

Pulse width

≤ 300 µs; duty cycle ≤ 2%.

ƒ

When mounted on 1 inch square copper board, t < 10 sec.

„

Typ = measured - Q

oss

*

Devices are 100% tested to these parameters.