MMBT2907AL datasheet(2/6 Pages) ONSEMI

2 / 6 page

MMBT2907AL, SMMBT2907AL

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 5)

(IC = −1.0 mAdc, IB = 0)

(IC = −10 mAdc, IB = 0)

V(BR)CEO

−60

−

Vdc

Collector−Base Breakdown Voltage (IC = −10 mAdc, IE = 0)

V(BR)CBO

−60

−

Vdc

Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0)

V(BR)EBO

−5.0

−

Vdc

Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc)

ICEX

−

−50

nAdc

Collector Cutoff Current

(VCB = −50 Vdc, IE = 0)

(VCB = −50 Vdc, IE = 0, TA = 125°C)

ICBO

−

−0.010

−10

mAdc

Base Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc)

IBL

−

−50

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = −0.1 mAdc, VCE = −10 Vdc)

(IC = −1.0 mAdc, VCE = −10 Vdc)

(IC = −10 mAdc, VCE = −10 Vdc)

(IC = −150 mAdc, VCE = −10 Vdc)

(IC = −500 mAdc, VCE = −10 Vdc) (Note 5)

hFE

100

−

300

−

Collector−Emitter Saturation Voltage (Note 5)

(IC = −150 mAdc, IB = −15 mAdc) (Note 5)

(IC = −500 mAdc, IB = −50 mAdc)

VCE(sat)

−

−0.4

−1.6

Vdc

Base −Emitter Saturation Voltage (Note 5)

(IC = −150 mAdc, IB = −15 mAdc)

(IC = −500 mAdc, IB = −50 mAdc)

VBE(sat)

−

−1.3

−2.6

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Notes 5, 6),

(IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz)

200

−

MHz

Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

8.0

Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz)

Cibo

−

SWITCHING CHARACTERISTICS

Turn−On Time

(VCC = −30 Vdc, IC = −150 mAdc,

IB1 = −15 mAdc)

ton

−

Delay Time

−

Rise Time

−

Turn−Off Time

(VCC = −6.0 Vdc, IC = −150 mAdc,

IB1 = IB2 = −15 mAdc)

(VCC = −6.0 Vdc, IC = −150 mAdc,

IB1 = IB2 = −15 mAdc)

toff

−

100

Storage Time

−

Fall Time

−

5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

6. fT is defined as the frequency at which |hfe| extrapolates to unity.

-16 V

200 ns

1.0 k

200

-30 V

TO OSCILLOSCOPE

RISE TIME

≤ 5.0 ns

+15 V

-6.0 V

1.0 k

1N916

1.0 k

200 ns

-30 V

TO OSCILLOSCOPE

RISE TIME

≤ 5.0 ns

INPUT

Zo = 50 W

PRF = 150 PPS

RISE TIME

≤ 2.0 ns

P.W. < 200 ns

INPUT

Zo = 50 W

PRF = 150 PPS

RISE TIME

≤ 2.0 ns

P.W. < 200 ns

Figure 1. Delay and Rise Time Test Circuit

Figure 2. Storage and Fall Time Test Circuit

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