TIP33C datasheet(3/6 Pages) ONSEMI

Part #	TIP33C

Description	NPN High-Power Transistors Designed for general?뭦urpose power amplifier and switching

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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3 / 6 page

TIP33A, TIP33C

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

TIP33A

(IC = 30 mA, IB = 0)

TIP33C

VCEO(sus)

100

−

Vdc

Collector−Emitter Cutoff Current

(VCE = 30 V, IB = 0)

TIP33A

(VCE = 60 V, IB = 0)

TIP33C

ICEO

−

0.7

Collector−Emitter Cutoff Current

(VCE = Rated VCEO, VEB = 0)

ICES

−

0.4

Emitter−Base Cutoff Current

(VEB = 5.0 V, IC = 0)

IEBO

−

1.0

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 1.0 A, VCE = 4.0 V)

(IC = 3.0 A, VCE = 4.0 V)

hFE

−

100

−

Collector−Emitter Saturation Voltage

(IC = 3.0 A, IB = 0.3 A)

(IC = 10 A, IB = 2.5 A)

VCE(sat)

−

1.0

4.0

Vdc

Base−Emitter On Voltage

(IC = 3.0 A, VCE = 4.0 V)

(IC = 10 A, VCE = 4.0 V)

VBE(on)

−

1.6

3.0

Vdc

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain

(IC = 0.5 A, VCE = 10 V, f = 1.0 kHz)

hfe

−

Current−Gain — Bandwidth Product

(IC = 0.5 A, VCE = 10 V, f = 1.0 MHz)

3.0

−

MHz

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

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