MTP23P06VG datasheet(2/7 Pages) ONSEMI

2 / 7 page

MTP23P06V

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

−

60.5

−

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

−

100

mAdc

Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

2.0

−

2.8

5.3

4.0

−

Vdc

mV/

°C

Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 11.5 Adc)

RDS(on)

−

0.093

0.12

Drain−Source On−Voltage

(VGS = 10 Vdc, ID = 23 Adc)

(VGS = 10 Vdc, ID = 11.5 Adc, TJ = 150°C)

VDS(on)

−

3.3

3.2

Vdc

Forward Transconductance

(VDS = 10.9 Vdc, ID = 11.5 Adc)

gFS

5.0

11.5

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)

Ciss

−

1160

1620

Output Capacitance

Coss

−

380

530

Transfer Capacitance

Crss

−

105

210

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time

(VDD = 30 Vdc, ID = 23 Adc,

VGS = 10 Vdc, RG = 9.1 W)

td(on)

−

13.8

Rise Time

−

98.3

200

Turn−Off Delay Time

td(off)

−

Fall Time

−

120

Gate Charge (See Figure 8)

(VDS = 48 Vdc, ID = 23 Adc, VGS = 10 Vdc)

−

7.0

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 23 Adc, VGS = 0 Vdc)

(IS = 23 Adc, VGS = 0 Vdc, TJ = 150°C)

VSD

−

2.2

1.8

3.5

−

Vdc

Reverse Recovery Time

(IS = 23 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms)

trr

−

142.2

−

100.5

−

41.7

−

Reverse Recovery Stored Charge

QRR

−

0.804

−

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from contact screw on tab to center of die)

(Measured from the drain lead 0.25

″ from package to center of die)

−

3.5

4.5

−

Internal Source Inductance

(Measured from the source lead 0.25

″ from package to source bond pad)

−

7.5

−

1. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

MTP23P06VG Datasheet(PDF) 2 Page - ON Semiconductor

MTP23P06VG Datasheet(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL