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BAT54HT1G Datasheet(PDF) 2 Page - ON Semiconductor

Part # BAT54HT1G
Description  Schottky Barrier Diodes
PDF  4 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BAT54HT1G Datasheet(HTML) 2 Page - ON Semiconductor

  BAT54HT1G Datasheet HTML 1Page - ON Semiconductor BAT54HT1G Datasheet HTML 2Page - ON Semiconductor BAT54HT1G Datasheet HTML 3Page - ON Semiconductor BAT54HT1G Datasheet HTML 4Page - ON Semiconductor  
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BAT54HT1G, NSVBAT54HT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 A)
V(BR)R
30
−
−
V
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
−
7.6
10
pF
Reverse Leakage
(VR = 25 V)
IR
−
0.5
2.0
Adc
Forward Voltage
(IF = 0.1 mAdc)
VF
−
0.22
0.24
Vdc
Forward Voltage
(IF = 30 mAdc)
VF
−
0.41
0.5
Vdc
Forward Voltage
(IF = 100 mAdc)
VF
−
0.52
0.8
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
trr
−
−
5.0
ns
Forward Voltage
(IF = 1.0 mAdc)
VF
−
0.29
0.32
Vdc
Forward Voltage
(IF = 10 mAdc)
VF
−
0.35
0.40
Vdc
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V
2 k
820
0.1 F
DUT
VR
100
H
0.1
F
50  Output
Pulse
Generator
50  Input
Sampling
Oscilloscope
tr
tp
t
10%
90%
IF
IR
trr
t
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit



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