S1A, S1B, S1D, S1G, S1J, S1K, S1M

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Vishay General Semiconductor

Revision: 19-Aug-13

3

Document Number: 88711

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

T

Pulse Width = 300 µs

1 % Duty Cycle

0.4

100

1.6

2.0

0.8

1.2

Instantaneous Forward Voltage (V)

10

1

0.1

0.01

020

60

40

100

80

0.01

0.001

0.1

10

1

T

T

T

Percent of Rated Peak Reverse Voltage (%)

Reverse Voltage (V)

0.1

0.01

1

10

100

100

10

1

T

f = 1.0 MHz

V

t - Pulse Duration (s)

0.1

0.01

1

10

100

100

1000

10

1

Units Mounted on

0.20" x 0.20" (5.0 mm x 5.0 mm)

x 0.5 Mil. Inches (0.013 mm)

Thick Copper Land Areas

S1A thru S1J

S1K, S1M

0.008 (0.203)

0.194 (4.93)

0.208 (5.28)

0.157 (3.99)

0.177 (4.50)

0.100 (2.54)

0.110 (2.79)

0.078 (1.98)

0.090 (2.29)

0.006 (0.152)

0.012 (0.305)

0.049 (1.25)

0.065 (1.65)

Cathode Band

0 (0)

DO-214AC (SMA)

Mounting Pad Layout

0.074 (1.88)

MAX.

0.208 (5.28)

REF.

0.066 (1.68)

MIN.

0.060 (1.52)

MIN.

0.030 (0.76)

0.060 (1.52)