CBC050 datasheet(2/4 Pages) CYMBET

2 / 4 page

EnerChip™ CBC050 Solid State Energy Storage

DS-72-01 Rev B

Page 2 of 4

Operating Characteristics

Parameter

Condition

Min

Typical

Max

Units

Discharge Cutoff Voltage

25°C

3.0(1)

Charge Voltage

25°C

4.0(2)

4.1

4.3

Pulse Discharge Current

25°C

300(3)

µA

Cell Resistance (25°C)

Charge cycle 2

750

2000

Ω

Charge cycle 1000

4200

7000

Self-Discharge (5yr average; 25°C)

Non-recoverable

2.5

% per year

Recoverable

1.5(4)

% per year

Operating Temperature

-20

+70

°C

Storage Temperature

-40

125(5)

°C

Recharge Cycles

(to 80% of rated

capacity; 4.1V charge

voltage)

25°C

10% depth-of-discharge

5000

cycles

50% depth-of discharge

1000

cycles

40°C

10% depth-of-discharge

2500

cycles

50% depth-of-discharge

500

cycles

Recharge Time (to 80% of rated capacity;

4.1V charge voltage)

Charge cycle 2

minutes

Charge cycle 1000

Capacity

100µA discharge; 25°C

µAh

(1) Failure to cutoff the discharge voltage at 3.0V will result in EnerChip performance degradation.

(2) Charging at 4.0V will charge the cell to approximately 70% of its rated capacity.

(3) Typical pulse duration = 20 milliseconds.

(4) First month recoverable self-discharge is 5% average.

(5) Storage temperature is for uncharged EnerChip.

EnerChip Part Number

Description

Notes

CBC050-M8C

50µAh in 16-pin M8 QFN Package

tube

CBC050-M8C-TR1

50µAh in 16-pin M8 QFN Package

tape & reel 1000 pcs

CBC050-M8C-TR5

50µAh in 16-pin M8 QFN Package

tape & reel 5000 pcs

CBC050-M8C-WP

50µAh in 16-pin M8 QFN Package

waffle pack

CBC050-BDC-WP

50µAh Bare Die

Contact Cymbet

CBC050-BUC-WP

50µAh Bumped Bare Die

Contact Cymbet

Ordering Information

Note:Allspecificationscontainedwithinthisdocumentaresubjecttochangewithoutnotice

EnerChip Discharge Characteristics

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