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PIC16C620 Datasheet(PDF) 91 Page - Microchip Technology |
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PIC16C620 Datasheet(HTML) 91 Page - Microchip Technology |
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91 / 128 page ![]() 2003 Microchip Technology Inc. DS30235J-page 89 PIC16C62X 12.1 DC Characteristics: PIC16C62X-04 (Commercial, Industrial, Extended) PIC16C62X-20 (Commercial, Industrial, Extended) PIC16LC62X-04 (Commercial, Industrial, Extended) (CONT.) PIC16C62X Standard Operating Conditions (unless otherwise stated) Operating temperature -40 °C ≤ TA ≤ +85°C for industrial and 0 °C ≤ TA ≤ +70°C for commercial and -40 °C ≤ TA ≤ +125°C for extended PIC16LC62X Standard Operating Conditions (unless otherwise stated) Operating temperature -40 °C ≤ TA ≤ +85°C for industrial and 0 °C ≤ TA ≤ +70°C for commercial and -40 °C ≤ TA ≤ +125°C for extended Operating voltage V DD range is the PIC16C62X range. Param . No. Sym Characteristic Min Typ† Max Units Conditions D022 D022A D023 D023A ∆IWDT ∆IBOR ∆ICOM P ∆IVREF WDT Current(5) Brown-out Reset Current(5) Comparator Current for each Comparator(5) V REF Current(5) — — — — 6.0 350 — — 20 25 425 100 300 µA µA µA µA µA V DD=4.0V (125 °C) BOD enabled, V DD = 5.0V V DD = 4.0V V DD = 4.0V D022 D022A D023 D023A ∆IWDT ∆IBOR ∆ICOM P ∆IVREF WDT Current(5) Brown-out Reset Current(5) Comparator Current for each Comparator(5) V REF Current(5) — — — — 6.0 350 — — 15 425 100 300 µA µA µA µA V DD=3.0V BOD enabled, V DD = 5.0V V DD = 3.0V V DD = 3.0V 1A F OSC LP Oscillator Operating Frequency RC Oscillator Operating Frequency XT Oscillator Operating Frequency HS Oscillator Operating Frequency 0 0 0 0 — — — — 200 4 4 20 kHz MHz MHz MHz All temperatures All temperatures All temperatures All temperatures 1A F OSC LP Oscillator Operating Frequency RC Oscillator Operating Frequency XT Oscillator Operating Frequency HS Oscillator Operating Frequency 0 0 0 0 — — — — 200 4 4 20 kHz MHz MHz MHz All temperatures All temperatures All temperatures All temperatures * These parameters are characterized but not tested. † Data in "Typ" column is at 5V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: This is the limit to which V DD can be lowered without losing RAM data. 2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current consumption. The test conditions for all I DD measurements in Active Operation mode are: OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to V DD, MCLR = V DD; WDT enabled/disabled as specified. 3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V DD or VSS. 4: For RC osc configuration, current through R EXT is not included. The current through the resistor can be estimated by the formula: Ir = V DD/2REXT (mA) with REXT in k Ω. 5: The ∆ current is the additional current consumed when this peripheral is enabled. This current should be added to the base I DD or IPD measurement. |
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