REF1112

2

SBOS283C

www.ti.com

REVERSE BREAKDOWN VOLTAGE

1.2475

1.25

1.2525

V

–0.2

+0.2

%

TEMPERATURE COEFFICIENT

1.2

µA ≤ I

30

ppm/

°C

1.5

µA ≤ I

50

ppm/

°C

1.5

µA ≤ I

ppm/

°C

MINIMUM OPERATING CURRENT

1

1.2

µA

REVERSE BREAKDOWN VOLTAGE

30

100

ppm/mA

CHANGE WITH CURRENT

1.2

µA ≤ I

REVERSE DYNAMIC IMPEDANCE

1.2

µA ≤ I

0.037

0.125

Ω

0.1Hz

≤ I

25

µV

PP

100

ppm

LONG-TERM STABILITY

+25

°C ± 0.1°C

60

ppm/kHr

TEMPERATURE CHARACTERISTICS

Specified Range

–40

+125

°C

Operating Range

–40

+125

°C

Storage Range

–40

+150

°C

Thermal Resistance

θ

JA

SOT23-3 Surface-Mount

135

°C/W

(1) Peak-to-peak noise is measured with a 2-pole high-pass filter at 0.1Hz and a 4-pole, low-pass Chebyshev filter at 10Hz.

(2) Thermal hysteresis is defined as the change in output voltage after operating the device at +25

°C, cycling the device through the specified temperature range,

and returning to +25

°C.

Reverse Breakdown Current ............................................................ 10mA

Forward Current ................................................................................ 10mA

Operating Temperature .................................................. –55

°C to +125°C

Storage Temperature ...................................................... –65

°C to +150°C

Junction Temperature .................................................................... +150

°C

(1) Stresses above these ratings may cause permanent damage. Exposure to

absolute maximum conditions for extended periods may degrade device

reliability. These are stress ratings only, and functional operation of the device

at these or any other conditions beyond those specified is not implied.

ELECTROSTATIC

DISCHARGE SENSITIVITY

Electrostatic discharge can cause damage ranging from

performance degradation to complete device failure. Texas

Instruments recommends that all integrated circuits be handled

and stored using appropriate ESD protection methods.

ESD damage can range from subtle performance degradation

to complete device failure. Precision integrated circuits may be

more susceptible to damage because very small parametric

changes could cause the device not to meet published speci-

fications.

NOTE: (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at

www.ti.com.

SPECIFIED

PACKAGE

TEMPERATURE

PACKAGE

ORDERING

TRANSPORT

PRODUCT

PACKAGE-LEAD

DESIGNATOR

RANGE

MARKING

NUMBER

MEDIA, QUANTITY

REF1112

SOT23-3

DBZ

–40

°C to +125°C

R11A

REF1112AIDBZT

Tape and Reel, 250

""

"

"

"

REF1112AIDBZR

Tape and Reel, 3000

ELECTRICAL CHARACTERISTICS

REF1112 - 1.25V

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS