OPA683IDBVT datasheet(21/31 Pages) TI

21 / 31 page

OPA683

SBOS221E

www.ti.com

INPUT AND ESD PROTECTION

The OPA683 is built using a very high speed complementary

bipolar process. The internal junction breakdown voltages

are relatively low for these very small geometry devices.

These breakdowns are reflected in the Absolute Maximum

Ratings table where an absolute maximum 13V across the

supply pins is reported. All device pins have limited ESD

protection using internal diodes to the power supplies as

shown in Figure 15.

These diodes provide moderate protection to input overdrive

voltages above the supplies as well. The protection diodes

can typically support 30mA continuous current. Where higher

currents are possible (e.g. in systems with

±15V supply parts

driving into the OPA683), current limiting series resistors

should be added into the two inputs. Keep these resistor

values as low as possible since high values degrade both

noise performance and frequency response.

External

–V

Internal

Circuitry

FIGURE 15. Internal ESD Protection.

OPA683IDBVT Datasheet(PDF) 21 Page - Texas Instruments