STD16NF06 datasheet(3/11 Pages) STMICROELECTRONICS

3 / 11 page

STD16NF06

2 Electrical characteristics

3/11

Electrical characteristics

( TCASE = 25 °C unless otherwise specified )

Table 3.

On/off states

Table 5.

Switching times

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown

Voltage

ID = 250µA

VGS= 0

IDSS

Zero Gate Voltage Drain

Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC=125°C

µA

IGSS

Gate Body Leakage Current

(VDS = 0)

VGS = ±20V

100

µA

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = 250µA

RDS(on)

Static Drain-Source On

Resistance

VGS = 10V

ID = 8A

0.060

0.070

Ω

Table 4.

Dynamic

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs Note 5 Forward Transconductance

VDS = 25V

ID = 8A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VDS = 15V, f = 1MHz, VGS = 0

400

103

41.5

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =30

ID = 16A

VGS =10V

Figure 14 on page 7

14.1

2.8

5.4

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

Rise Time

VDD = 30V,

ID = 8A,

RG = 4.7Ω, VGS = 10V

Figure 13 on page 7

td(off)

Off voltage Rise Time

FallTime

VDD = 30V,

ID = 8A,

RG = 4.7Ω, VGS = 10V

Figure 15 on page 7

5.5

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