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VSMP2010 Datasheet(PDF) 4 Page - Vishay Siliconix |
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VSMP2010 Datasheet(HTML) 4 Page - Vishay Siliconix |
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4 / 5 page ![]() VSMP Series (0603, 0805, 1206, 1506, 2010, 2018, 2512) (Z-Foil) Vishay Foil Resistors www.vishayfoilresistors.com For any questions, contact: foil@vishaypg.com Document Number: 63060 4 Revision: 29-Oct-2012 PULSE TEST TEST DESCRIPTION All parts are baked at +125°C for 1 hour and allowed to cool at room temperature for 1 hour, prior to testing. By using an electrolytic 0.01µF capacitor charged to 1200 VDC, a single pulse was performed on 30 units of 1206, 10 k of Surface Mount Vishay Foil resistor and Thin Film resistor. The units were allowed time to cool down, after which the resistance measurements were taken and displayed in ppm deviation from the initial reading. TEST RESULTS FIGURE 8 - PULSE TEST DESCRIPTION !) 2 "# *+ FIGURE 9 - PULSE TEST RESULTS AT 1200 VDC* -20000 0 20000 40000 60000 80000 100000 120000 140000 0 5 10 15 20 25 30 Resistor # Size: 1206 Value: 10K n = 30 Thin Film Bulk Metal® Foil Note: Average of 30 units yielded deviation of 30 723 ppm of the Thin Film vs –14 ppm for the Bulk Metal® Foil * Note: Average of 30 units yielded deviation of 30,723 ppm of the Thin Film vs. -14 ppm for the Bulk Metal® Foil ELECTROSTATIC DISCHARGE (ESD) ESD can be categorized into three types of damages: Parametric Failure - occurs when the ESD event alters one or more device parameters (resistance in the case of resistors), causing it to shift from its required tolerance. This failure does not directly pertain to functionality; thus a parametric failure may be present while the device is still functional. Catastrophic Damage - occurs when the ESD event causes the device to immediately stop functioning. This may occur after one or a number of ESD events with diverse causes, such as human body discharge or the mere presence of an electrostatic field. Latent Damage - occurs when the ESD event causes moderate damage to the device, which is not noticeable, as the device appears to be functioning correctly. However, the load life of the device has been dramatically reduced, and further degradation caused by operating stresses may cause the device to fail during service. Latent damage is the source for greatest concern, since it is very difficult to detect by re-measurement or by visual inspection, because damage may have occurred under the external coating. TEST DESCRIPTION By using an electrolytic 500 pF capacitor charged up to 4500 V, pulses were performed on 10 units of 1206, 10 k of three different Surface Mount Chip Resistors technologies, with an initial voltage spike of 2500 V (Figure 10). The units were allowed time to cool down, after which the resistance measurements were taken and displayed in ppm deviation from the initial readings. Readings were then taken in 500 V increments up to 4500 V. FIGURE 10 - ESD TEST DESCRIPTION 2500 V to 4500 V Rx 500 pF DMM 1 M Ω TABLE 6 - ESD TEST RESULTS (AVERAGE OF 10 UNITS) VOLTS ∆R (%) THICK FILM THIN FILM FOIL 2500 -2.7 97 <0.005 3000 -4.2 366 <0.005 3500 -6.2 OPEN <0.005 4000 -7.4 OPEN <0.005 4500 -8.6 OPEN <0.005 |
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