PHD13005

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Product data sheet

Rev. 02 — 29 July 2010

6 of 14

NXP Semiconductors

PHD13005

NPN power transistor with integrated diode

6.

Characteristics

[1]

measured with half-sine wave voltage (curve tracer)

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

collector-emitter cut-off

current

[1] --5

mA

[1] --1

mA

collector-base cut-off current

[1] --1

mA

collector-emitter cut-off

current

[1] --0.1

mA

emitter-base cut-off current

--10

mA

collector-emitter sustaining

voltage

see Figure 6; see Figure 15

400

-

-

V

collector-emitter saturation

voltage

see Figure 8

-0.1

0.5

V

see Figure 8

-0.2

0.6

V

see Figure 8

-0.3

1

V

base-emitter saturation

voltage

-

0.92

1.6

V

-

0.85

1.2

V

forward voltage

-

1.04

1.5

V

DC current gain

12

20

40

10

17

28

Dynamic characteristics

storage time

see Figure 11; see Figure 12

-1.2

2

µs

see Figure 13; see Figure 14

-2.7

4

µs

see Figure 11; see Figure 12

-1.4

4

µs

fall time

see Figure 13; see Figure 14

-0.3

0.9

µs

see Figure 11; see Figure 12

-

0.16

0.9

µs

see Figure 11; see Figure 12

-0.1

0.5

µs