MTP10N40E

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0, ID = 0.25 mA)

V(BR)DSS

400

—

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 400 V, VGS = 0)

(VDS = 320 V, VGS = 0, TJ = 125°C)

IDSS

—

—

—

—

0.25

1.0

mAdc

Gate–Body Leakage Current — Forward (VGSF = 20 Vdc, VDS = 0)

IGSSF

—

—

100

nAdc

Gate–Body Leakage Current — Reverse (VGSR = 20 Vdc, VDS = 0)

IGSSR

—

—

100

nAdc

ON CHARACTERISTICS*

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mAdc)

(TJ = 125°C)

VGS(th)

2.0

1.5

—

—

4.0

3.5

Vdc

Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 5.0 A)

RDS(on)

—

0.4

0.55

Ohms

Drain–to–Source On–Voltage (VGS = 10 Vdc)

(ID = 5.0 A)

(ID = 2.5 A, TJ = 100°C)

VDS(on)

—

—

—

—

6.0

4.75

Vdc

Forward Transconductance (VDS = 15 Vdc, ID = 5.0 A)

gFS

4.0

—

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 V, VGS = 0,

f = 1.0 MHz)

Ciss

—

1570

—

pF

Output Capacitance

(VDS = 25 V, VGS = 0,

f = 1.0 MHz)

Coss

—

230

—

Transfer Capacitance

f = 1.0 MHz)

Crss

—

55

—

SWITCHING CHARACTERISTICS*

Turn–On Delay Time

(VDD = 200 V, ID ≈ 10 A,

RL = 20 Ω, RG = 9.1 Ω,

VGS(on) = 10 V)

td(on)

—

25

—

ns

Rise Time

(VDD = 200 V, ID ≈ 10 A,

RL = 20 Ω, RG = 9.1 Ω,

VGS(on) = 10 V)

tr

—

37

—

Turn–Off Delay Time

RL = 20 Ω, RG = 9.1 Ω,

VGS(on) = 10 V)

td(off)

—

75

—

Fall Time

GS(on) = 10 V)

tf

—

31

—

Total Gate Charge

(VDS = 320 V, ID = 10 A,

VGS = 10 V)

Qg

—

46

63

nC

Gate–Source Charge

(VDS = 320 V, ID = 10 A,

VGS = 10 V)

Qgs

—

10

—

Gate–Drain Charge

VGS = 10 V)

Qgd

—

23

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 10 A, di/dt = 100 A/µs)

VSD

—

—

2.0

Vdc

Forward Turn–On Time

(IS = 10 A, di/dt = 100 A/µs)

ton

—

**

—

ns

Reverse Recovery Time

trr

—

250

—

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the contact screw on tab to center of die)

(Measured from the drain lead 0.25

″ from package to center of die)

Ld

—

—

3.5

4.5

—

—

nH

Internal Source Inductance

(Measured from the source lead 0.25

″ from package to source bond pad)

Ls

—

7.5

—

nH

* Pulse Test: Pulse Width = 300

µs, Duty Cycle ≤ 2.0%.

** Limited by circuit inductance.