SI7430DP datasheet(4/9 Pages) VAISH

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Document Number: 74282

S11-0212-Rev. C, 14-Feb-11

Vishay Siliconix

Si7430DP

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.1

0.01

0.001

VSD - Source-to-Drain Voltage (V)

1.2

0.8

0.6

0.4

0.2

100

TJ = 25 °C

TJ = 150 °C

- 1.5

- 1.0

- 0.5

0.0

0.5

1.0

- 50

- 25

100

125

150

ID = 5 mA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.04

0.08

0.12

0.16

0.20

0246

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

ID = 5 A

Time (s)

120

160

200

0.001

0.01

0.1

Safe Operating Area, Junction-to-Ambient

* VGS > minimum VGS at which RDS(on) is specified

100

0.01

0.1

VDS - Drain-to-Source Voltage (V)

0.01

0.1

100

1000

Limited by RDS(on)*

TA = 25 °C

Single Pulse

1 s

10 s

10 ms

100 ms

1 ms

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