1SS421

2008-02-02

1

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS421

High-Speed Switching Application

Characteristics

Symbol

Rating

Unit

Reverse voltage

30

V

Maximum (peak) forward current

300

mA

Average forward current

200

mA

Surge current (10ms)

1

A

Power dissipation

P *

150

mW

Junction temperature

125

°C

Storage temperature range

−55 to 125

°C

Operating temperature range

−40 to 100

°C

*:

Mounted on a glass epoxy circuit board of 20 mm × 20 mm,

Cu pad dimension of 4 mm × 4 mm.

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Characteristics

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

―

―

0.18

―

―

―

0.22

―

Forward voltage

―

―

0.44

0.5

V

―

―

―

20

Reverse current

―

―

―

30

μA

Total capacitance

―

⎯

19

⎯

pF

Marking

JEDEC

―

JEITA

―

TOSHIBA

1-1G1A

Weight: 1.4 mg (typ.)

Unit: mm

S7