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2SA1837M Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SA1837M Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page ![]() 2SA1837 2006-11-09 2 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −230 V, IE = 0 ― ― −1.0 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −1.0 μA Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −230 ― ― V DC current gain hFE VCE = −5 V, IC = −100 mA 100 ― 320 Collector-emitter saturation voltage VCE (sat) IC = −500 mA, IB = −50 mA ― ― −1.5 V Base-emitter voltage VBE VCE = −5 V, IC = −500 mA ― ― −1.0 V Transition frequency fT VCE = −10 V, IC = −100 mA ― 70 ― MHz Collector output capacitance Cob VCB = −10 V, IC = 0, f = 1 MHz ― 30 ― pF Marking Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. A1837 Part No. (or abbreviation code) |
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