2SC2458

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC2458

Audio Amplifier Applications

• Low noise: NF (2) = 1dB (typ.), 10dB (max)

• Complementary to 2SA1048.

• Small package.

Characteristics

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

50

V

Emitter-base voltage

5

V

Collector current

150

mA

Base current

50

mA

Collector power dissipation

200

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

⎯

⎯

0.1

μA

Emitter cut-off current

⎯

⎯

0.1

μA

DC current gain

(Note)

70

⎯

700

Collector-emitter saturation voltage

⎯

0.1

0.25

V

Transition frequency

80

⎯

⎯

MHz

Collector output capacitance

⎯

2.0

3.5

pF

Noise figure

NF

⎯

1.0

10

dB

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-4E1A

Weight: 0.13 g (typ.)