2SJ201 datasheet(2/5 Pages) TOSHIBA

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2SJ201

2009-12-10

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain cut−off current

IDSS

VDS = −200 V, VGS = 0

―

−1.0

Gate leakage current

IGSS

VDS = 0, VGS = ±20 V

―

±0.5

μA

Drain−source breakdown voltage

V (BR) DSS

ID = −10 mA, VGS = 0

−200

―

Gate−source cut−off voltage

(Note 2)

VGS (OFF)

VDS = −10 V, ID = −0.1 A

−0.8

―

−2.8

Drain−source saturation voltage

VDS (ON)

ID = −8 A, VGS = −10 V

―

−2.0

−5.0

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −5 A

―

5.0

―

Input capacitance

Ciss

VDS = −30 V, VGS = 0, f = 1 MHz

―

1500

―

Output capacitance

Coss

VDS = −30 V, VGS = 0, f = 1 MHz

―

400

―

Reverse transfer capacitance

Crss

VDS = −30 V, VGS = 0, f = 1 MHz

―

230

―

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: VGS (OFF) Classification

O: −0.8 to −1.6, Y: −1.4 to −2.8

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Marking

Note 3: A line under a Lot No. identifies the indication of product Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27

January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

2SJ201

TOSHIBA

JAPAN

Lot No.

Note 3

Part No. (or abbreviation code)

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