RN1112,RN1113

2010-03-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1112, RN1113

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

With built-in bias resistors

Simplified circuit design

Reduced number of parts and simplified process

Complementary to RN2112 and RN2113

Equivalent Circuit

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

50

V

Emitter-base voltage

5

V

Collector current

100

mA

Collector power dissipation

100

mW

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

―

―

―

100

nA

Emitter cut-off current

―

―

―

100

nA

DC current gain

―

120

―

700

―

Collector-emitter saturation voltage

―

―

0.1

0.3

V

Transition frequency

―

―

250

―

MHz

Collector output capacitance

―

―

3

6

pF

RN1112

15.4

22

28.6

Input resistor

RN1113

R1

―

―

32.9

47

61.1

kΩ

JEDEC

―

JEITA

―

TOSHIBA

2-2H1A

Weight: 2.4mg (typ.)

Unit: mm