RN1401～RN1406

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1401, RN1402, RN1403

RN1404, RN1405, RN1406

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

With built-in bias resistors

Simplified circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN2401~RN2406

Equivalent Circuit and Bias Resistor Values

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

RN1401~1406

50

V

RN1401~1404

10

Emitter-base voltage

RN1405, 1406

5

V

Collector current

100

mA

Collector power dissipation

200

mW

Junction temperature

150

°C

Storage temperature range

RN1401~1406

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012g (typ.)

Unit: mm

Type No.

R1 (kΩ

R2 (kΩ

RN1401

4.7

4.7

RN1402

10

10

RN1403

22

22

RN1404

47

47

RN1405

2.2

47

RN1406

4.7

47