www.rohm.com

© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

EMA4 / UMA4N / FMA4A

lAbsolute maximum ratings (Ta = 25°C)

<For Tr1 and Tr2 in common>

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector Power dissipation

EMA4 / UMA4N

FMA4A

Junction temperature

Range of storage temperature

lElectrical characteristics(Ta = 25°C)

<For Tr1 and Tr2 in common>

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference footprint

*3 120mW per element must not be exceeded.

*4 200mW per element must not be exceeded.

*2

150 (Total)

*3

300 (Total)

*4

mW

mW

k

W

Transition frequency

*1

f = 100MHz

-

250

-

MHz

Input resistance

-

7

10

13

V

DC current gain

100

250

600

-

Collector-emitter saturation voltage

-

-

-0.3

mA

Emitter cut-off current

-

-

-0.5

mA

Collector cut-off current

-

-

-0.5

V

Emitter-base breakdown voltage

-5

-

-

V

Collector-emitter breakdown voltage

-50

-

-

Unit

Collector-base breakdown voltage

-50

-

-

V

Parameter

Symbol

Conditions

Min.

Typ.

Max.

150

°C

-55 to +150

°C

*1

-100

mA

-50

V

-5

V

Parameter

Symbol

Values

Unit

-50

V

2/6

2012.06 - Rev.B