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2SA1213 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SA1213 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page ![]() 2SA1213 2009-12-21 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −50 V, IE = 0 ― ― −0.1 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −0.1 μA Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −50 ― ― V hFE (1) (Note 3) VCE = −2 V, IC = −0.5 A 70 ― 240 DC current gain hFE (2) VCE = −2 V, IC = −2.0 A 20 ― ― Collector-emitter saturation voltage VCE (sat) IC = −1 A, IB = −0.05 A ― ― −0.5 V Base-emitter saturation voltage VBE (sat) IC = −1 A, IB = −0.05 A ― ― −1.2 V Transition frequency fT VCE = −2 V, IC = −0.5 A ― 120 ― MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 40 ― pF Turn-on time ton ― 0.1 ― Storage time tstg ― 1.0 ― Switching time Fall time tf ― 0.1 ― μs Note 3: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking Note 4: A line beside a Lot No. identifies the indication of product Labels. Without a line: [[Pb]]/INCLUDES > MCV With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. IB2 −30 V IB1 20 μs IB1 IB2 IB1 = 0.05 A,IB2 = 0.05 A DUTY CYCLE ≤ 1% OUTPUT INPUT N Part No. (or abbreviation code) Lot No. Note 4 Characteristics indicator |
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