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2SA1313 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SA1313 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page ![]() 2SA1313 2007-11-01 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −50 V, IE = 0 ⎯ ⎯ −0.1 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ⎯ ⎯ −0.1 μA hFE (1) (Note) VCE = −1 V, IC = −100 mA 70 ⎯ 240 DC current gain hFE (2) (Note) VCE = −6 V, IC = −400 mA 25 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = −100 mA, IB = −10 mA ⎯ −0.1 −0.25 V Base-emitter voltage VBE VCE = −1 V, IC = −100 mA ⎯ −0.8 −1.0 V Transition frequency fT VCE = −6 V, IC = −20 mA ⎯ 200 ⎯ MHz Collector output capacitance Cob VCB = −6 V, IE = 0, f = 1 MHz ⎯ 13 ⎯ pF Note: hFE (1) classification O: 70~140, Y: 120~240 hFE (2) classification O: 25 (min), Y: 40 (min) |
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