2SC3295

2007-11-01

1

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT process)

2SC3295

Audio Frequency Amplifier Applications

Switching Applications

• Small package

Characteristics

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

50

V

Emitter-base voltage

5

V

Collector current

150

mA

Base current

30

mA

Collector power dissipation

150

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

⎯

⎯

0.1

μA

Emitter cut-off current

⎯

⎯

0.1

μA

DC current gain

(Note)

600

⎯

3600

Collector-emitter saturation voltage

⎯

0.12

0.25

V

Transition frequency

100

250

⎯

MHz

Collector output capacitance

⎯

3.5

⎯

pF

NF (1)

⎯

0.5

⎯

Noise figure

NF (2)

⎯

0.3

⎯

dB

Marking

Unit: mm

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)