BAV23C datasheet(4/13 Pages) NXP

4 / 13 page

BAV23_SER_7

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Product data sheet

Rev. 07 — 19 March 2010

4 of 13

NXP Semiconductors

BAV23 series

Dual high-voltage switching diodes

[1]

Single diode loaded.

[2]

Double diode loaded.

[3]

Tj =25 C prior to surge.

[4]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Characteristics

[1]

When switched from IF = 10 mA to IR =10mA; RL = 100 ; measured at IR =1mA.

Per device

Ptot

total power dissipation

Tamb  25 C

[4] -250

junction temperature

150

C

Tamb

ambient temperature

65

+150

C

Tstg

storage temperature

65

+150

C

Table 6.

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per device

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

500

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

360

K/W

Table 8.

Characteristics

Tamb =25 C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

forward voltage

IF = 100 mA

--1.0

IF = 200 mA

--1.25

reverse current

VR = 200 V

100

VR =200 V; Tj = 150 C

100

A

diode capacitance

f = 1 MHz; VR = 0 V

--2

trr

reverse recovery time

[1] --50

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