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2SC4793 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SC4793 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 4 page ![]() 2SC4793 2006-11-10 3 Collector-emitter voltage VCE (V) IC – VCE Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) VCE (sat) – IC Collector current IC (A) VCE (sat) – IC Collector current IC (mA) fT – IC Collector-emitter voltage VCE (V) Safe Operating Area 1.0 0 0 Common emitter Tc = 25°C 0.8 0.6 0.4 0.2 2 4 6 8 10 20 IB = 2 mA 4 6 8 10 −25 1.0 0 0 Common emitter VCE = 5 V 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.2 0.4 0.6 0.8 Tc = 100°C 25 500 10 5 Common emitter VCE = 10 V Tc = 25°C 30 50 100 300 1000 10 30 100 300 1 0.003 0.01 0.03 0.05 0.1 0.3 0.5 0.01 0.03 0.1 0.3 1 3 Common emitter IC/IB = 10 −25 Tc = 100°C 25 1000 0.003 10 30 50 100 300 500 0.01 0.03 0.1 0.3 1 3 Common emitter VCE = 5 V Tc = 100°C 25 −25 5 0.01 1 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 3 10 30 100 300 0.03 0.05 0.1 0.3 0.5 1 3 IC max (pulsed)* IC max (continuous) DC operation Tc = 25°C 100 ms* 10 ms* 1 ms* VCEO max |
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