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DF2B68M2SC Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # DF2B68M2SC
Description  ESD Protection Diodes Silicon Epitaxial Planar
PDF  8 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

DF2B68M2SC Datasheet(HTML) 2 Page - Toshiba Semiconductor

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DF2B6.8M2SC
2
4.
4.
4.
4. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25
))))
VRWM: Working peak reverse
voltage
VBR: Reverse breakdown voltage
IBR: Reverse breakdown current
IR: Reverse current
VC: Clamp voltage
IPP: Peak pulse current
RDYN: Dynamic resistance
Fig.
Fig.
Fig.
Fig. 4.1
4.1
4.1
4.1 Definitions of Electrical Characteristis
Definitions of Electrical Characteristis
Definitions of Electrical Characteristis
Definitions of Electrical Characteristis
Characteristics
Working peak reverse voltage
Reverse breakdown voltage
Reverse current
Clamp voltage
Dynamic resistance
Total capacitance
Symbol
VRWM
VBR
IR
VC
RDYN
Ct
Note
(Note 1)
(Note 2)
(Note 3)
Test Condition
IBR = 1 mA
VRWM = 5 V
IPP = 1 A
VR = 0 V, f = 1 MHz
Min
6
Typ.
13
1.15
0.2
Max
5
0.05
0.4
Unit
V
V
µA
V
pF
Note 1: Based on IEC61000-4-5 8/20 µs pulse.
Note 2: TLP parameter: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns,
extraction of dynamic resistance using a least-squares fit of TLP characteristics at IPP between 3 A to 8 A.
Note 3: Guaranteed by design.
5.
5.
5.
5. Guaranteed ESD Protection (Note)
Guaranteed ESD Protection (Note)
Guaranteed ESD Protection (Note)
Guaranteed ESD Protection (Note)
Test Condition
IEC61000-4-2 (Contact discharge)
ESD Protection
±8 kV
Note:
Criterion: No damage to devices.
2012-08-21
Rev.3.0



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