LM13700

SNOSBW2E – NOVEMBER 1999 – REVISED MARCH 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1)

Supply Voltage

LM13700

LM13700N

570 mW

Differential Input Voltage

±5V

2 mA

2 mA

Output Short Circuit Duration

Continuous

20 mA

Operating Temperature Range

LM13700N

0°C to +70°C

DC Input Voltage

Storage Temperature Range

−65°C to +150°C

Soldering Information

PDIP Package

Soldering (10 sec.)

260°C

SOIC Package

Vapor Phase (60 sec.)

215°C

Infrared (15 sec.)

220°C

(1)

“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is functional, but do not ensure specific performance limits.

(2)

For operation at ambient temperatures above 25°C, the device must be derated based on a 150°C maximum junction temperature and a

thermal resistance, junction to ambient, as follows: LM13700N, 90°C/W; LM13700M, 110°C/W.

(3)

Buffer output current should be limited so as to not exceed package dissipation.

2

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