BSP16T3 datasheet(2/3 Pages) ONSEMI

2 / 3 page

BSP16T1G

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector -- Emitter Breakdown Voltage

(IC =--50 mAdc, IB =0, L =25 mH)

V(BR)CEO

--300

Vdc

Collector -- Base Breakdown Voltage

(IC = --100 mAdc, IE =0)

V(BR)CBO

--300

Vdc

Collector--Emitter Cutoff Current

(VCE = --250 Vdc, IB =0)

ICES

--50

mAdc

Collector--Base Cutoff Current

(VCB = --280 Vdc, IE =0)

ICBO

--1.0

mAdc

Emitter--Base Cutoff Current

(VEB =--6.0 Vdc, IC =0)

IEBO

--20

mAdc

ON CHARACTERISTICS

DC Current Gain

(VCE =-- 10 Vdc, IC =--50 mAdc)

hFE

120

Collector-Emitter Saturation Voltage

(IC =-- 50 mAdc, IB =-- 5.0 mAdc)

VCE(sat)

-- 2.0

Vdc

DYNAMIC CHARACTERISTICS

Current Gain -- Bandwidth Product

(VCE =-- 10 Vdc, IC = --10mAdc,f= 30 MHz)

MHz

Collector--Base Capacitance

(VCB =-- 10 Vdc, IE = 0,f= 1.0MHz)

Cobo

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