CSD19503KCS

SLPS479 – DECEMBER 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Static Characteristics

Drain-to-Source Voltage

80

V

Drain-to-Source Leakage Current

1

μA

Gate-to-Source Leakage Current

100

nA

Gate-to-Source Threshold Voltage

2.2

2.8

3.4

V

8.8

10.9

m

Ω

Drain-to-Source On Resistance

7.6

9.2

m

Ω

Transconductance

110

S

Dynamic Characteristics

Input Capacitance

2100

2730

pF

Output Capacitance

555

721

pF

Reverse Transfer Capacitance

8.5

11.1

pF

Series Gate Resistance

1.2

2.4

Ω

Gate Charge Total (10 V)

28

36

nC

Gate Charge Gate to Drain

5.4

nC

Gate Charge Gate to Source

9.8

nC

6.1

nC

Output Charge

71

nC

Turn On Delay Time

7

ns

Rise Time

3

ns

Turn Off Delay Time

11

ns

Fall Time

2

ns

Diode Characteristics

Diode Forward Voltage

0.9

1.1

V

Reverse Recovery Charge

119

nC

di/dt = 300 A/

μs

Reverse Recovery Time

72

ns

THERMAL CHARACTERISTICS

PARAMETER

MIN

TYP

MAX

UNIT

Thermal Resistance Junction to Case

0.8

°C/W

Thermal Resistance Junction to Ambient

62

°C/W

2

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