2SD669 datasheet(1/2 Pages) WINNERJOIN

Part #	2SD669

Description	TRANSISTOR (NPN)

PDF	2 Pages

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Manufacturer	WINNERJOIN [SHENZHEN YONGERJIA INDUSTRY CO.,LTD]

Direct Link	http://www.wej.cn

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WEJ

ELECTRONIC

CO.,LTD

2SD669 TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM:

1

W (Tamb=25

℃)

Collector current

ICM:

1.5

A

Collector-base voltage

V(BR)CBO:

180

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=

1mA, IE=0

180

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=

10mA, IB=0

120

V

Emitter-base breakdown voltage

V(BR)EBO

IE=1mA, IC=0

5

V

Collector cut-off current

ICBO

VCB=160V, IE=0

10

µA

Emitter cut-off current

IEBO

VEB=4V, IC=0

10

µA

hFE(1)

VCE=5V, IC=150mA

60

320

DC current gain

hFE(2)

VCE=5V, IC=500mA

30

Collector-emitter saturation voltage

VCE(sat)

IC=500mA, IB=50mA

1

V

Base-emitter voltage

VBE

VCE=5V, IC=150mA

1.5

V

Transition frequency

fT

VCE=5V, IC=150mA

140

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

14

pF

CLASSIFICATION OF hFE(1)

Rank

B

C

D

Range

60-120

100-200

160-320

1 2 3

TO-126C

1. EMITTER

2. COLLECTOR

3. BASE

2SD669

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

RoHS

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2SD669 Datasheet(PDF) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

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