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STGW60V60DF Datasheet(PDF) 4 Page - STMicroelectronics |
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STGW60V60DF Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 16 page ![]() Electrical characteristics STGW60V60DF, STGWT60V60DF 4/16 DocID024154 Rev 6 Table 6. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time V CE = 400 V, I C = 60 A, R G = 4.7 Ω, V GE = 15 V , see Figure 28 -60 - ns t r Current rise time - 20 - ns (di/dt) on Turn-on current slope - 2365 - A/μs t d(off) Turn-off delay time - 208 - ns t f Current fall time - 14 - ns E on (1) 1. Energy losses include reverse recovery of the diode. Turn-on switching losses - 0.75 - mJ E off (2) 2. Turn-off losses include also the tail of the collector current. Turn-off switching losses - 0.55 - mJ E ts Total switching losses - 1.3 - mJ t d(on) Turn-on delay time V CE = 400 V, I C = 60 A , R G = 4.7 Ω, V GE = 15 V, T J = 175 °C, see Figure 28 -57 - ns t r Current rise time - 23 - ns (di/dt) on Turn-on current slope - 2191 - A/μs t d(off) Turn-off delay time - 216 - ns t f Current fall time - 27 - ns E on (1) Turn-on switching losses - 1.5 - mJ E off (2) Turn-off switching losses - 0.8 - mJ E ts Total switching losses - 2.3 - mJ Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t rr Reverse recovery time I F = 60 A, V R = 400 V , V GE = 15 V , di F /dt = 1000 A/μs see Figure 28 -74 - ns Q rr Reverse recovery charge - 703 - nC I rrm Reverse recovery current - 19 - A dI rr/ /dt Peak rate of fall of reverse recovery current during t b - 714 - A/μs E rr Reverse recovery energy - 184 - μJ t rr Reverse recovery time I F = 60 A, V R = 400 V , V GE = 15 V di F /dt = 1000 A/μs T J = 175 °C, see Figure 28 - 131 - ns Q rr Reverse recovery charge - 2816 - nC I rrm Reverse recovery current - 43 - A dI rr/ /dt Peak rate of fall of reverse recovery current during t b - 404 - A/μs E rr Reverse recovery energy - 821 - μJ |
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