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STGP35HF60W Datasheet(PDF) 5 Page - STMicroelectronics

Part # STGP35HF60W
Description  35 A, 600 V Ultrafast IGBT
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP35HF60W Datasheet(HTML) 5 Page - STMicroelectronics

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STGP35HF60W
Electrical characteristics
Doc ID 023894 Rev 1
5/13
Table 6.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 400 V, IC = 20 A
RG = 10 Ω, VGE = 15 V,
(see Figure 15)
-
30
15
1650
-
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 400 V, IC = 20 A
RG = 10 Ω, VGE = 15 V,
TJ = 125 °C (see Figure 15)
-
30
15
1600
-
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 400 V, IC = 20 A,
RGE = 10 Ω, VGE = 15 V
(see Figure 15)
-
30
175
40
-
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 400 V, IC = 20 A,
RGE = 10 Ω, VGE =15 V,
TJ = 125 °C
(see Figure 15)
-
50
225
70
-
ns
ns
ns
Table 7.
Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon
(1)
Eoff
Ets
1.
Eon is the tun-on losses when a typical diode is used in the test circuit in
Figure 17. If the IGBT is offered
in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs and diode are at the
same temperature (25 °C and 125 °C). Eon include diode recovery energy.
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 400 V, IC = 20 A
RG = 10 Ω, VGE = 15 V,
(see Figure 17)
-
290
185
475
µJ
µJ
µJ
Eon
(1)
Eoff
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 400 V, IC = 20 A
RG = 10 Ω, VGE = 15 V,
TJ = 125 °C (see Figure 17)
-
420
350
770
530
µJ
µJ
µJ



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