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STD80N4F6 Datasheet(PDF) 7 Page - STMicroelectronics

Part # STD80N4F6
Description  N-channel 40 V, 5.5 m typ., 80 A STripFET VI DeepGATE Power MOSFET in DPAK
PDF  18 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD80N4F6 Datasheet(HTML) 7 Page - STMicroelectronics

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DocID023839 Rev 3
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STD80N4F6, STU80N4F6
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Drain-source diode forward
characteristics
Figure 10. Normalized gate threshold voltage vs
temperature
Figure 11. Normalized on-resistance vs
temperature
Figure 12. Normalized BVDSS vs temperature
C
1500
1000
500
0
0
20
VDS(V)
(pF)
10
30
Ciss
Coss
Crss
40
2000
2500
AM15352v1
VSD
0
40
ISD(A)
(V)
20
60
80
0
0.2
0.4
0.6
0.8
1.0
TJ=-50°C
TJ=150°C
TJ=25°C
AM15604v1
VGS(th)
0.6
0.4
0.2
0
-75
-25
TJ(°C)
(norm)
-50
0.8
50
0 25
75 100
1
ID=250 µA
125
1.2
AM15354v1
RDS(on)
1.5
1
0
TJ(°C)
(norm)
0.5
ID=40A
VGS=10V
-75
0
-50
75
-25
50
100
25
125
2
150
AM15356v1
VDS
-75
0
TJ(°C)
(norm)
-50
75
-25
50
100
0.6
0.7
0.8
0.9
1
1.1
ID = 1mA
25
125
1.2
1.3
150
AM15353v1



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