STP20N65M5 datasheet(3/21 Pages) STMICROELECTRONICS

3 / 21 page

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5

Electrical ratings

Doc ID 022865 Rev 2

3/21

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

11.3

IDM

(1)

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

130

dv/dt (1)

ISD ≤ 18 A, di/dt ≤400 A/µs; VDS peak < V(BR)DSS, VDD=400 V

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

D2PAK

I2PAK,

TO-220

TO-247

Rthj-case Thermal resistance junction-case max

0.96

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

°C/W

Rthj-pcb

(1)

When mounted on 1 inch² FR-4, 1 Oz copper board.

Thermal resistance junction-pcb max

°C/W

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetetive or not

repetetive (pulse width limited by Tjmax )

EAS

Single pulse avalanche energy (starting

tj=25°C, Id= IAR; Vdd=50 V)

270

STP20N65M5 Datasheet(PDF) 3 Page - STMicroelectronics

STP20N65M5 Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21

Datasheet Download

Link URL