STP10N60M2 datasheet(3/24 Pages) STMICROELECTRONICS

3 / 24 page

DocID024710 Rev 2

3/24

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate-source voltage

± 25

Drain current (continuous) at T

= 25 °C

7.5

Drain current (continuous) at T

= 100 °C

4.9

(1)

Drain current (pulsed)

TOT

Total dissipation at T

= 25 °C

dv/dt

(1)

≤ 7.5 A, di/dt ≤ 400 A/μs; V

DS peak

< V

(BR)DSS

, V

=400 V

Peak diode recovery voltage slope

V/ns

dv/dt

(2)

DS ≤

480 V

MOSFET dv/dt ruggedness

stg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

Table 3. Thermal data

Symbol

Parameter

Value

Unit

D2PAK DPAK

TO-220

IPAK

thj-case

Thermal resistance junction-case max

1.47

°C/W

thj-pcb

Thermal resistance junction-pcb max

(1)

When mounted on 1 inch² FR-4, 2 Oz copper board

°C/W

thj-amb

Thermal resistance junction-ambient max

62.5

100

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetitive or not repetitive

(pulse width limited by T

jmax

)

2.5

Single pulse avalanche energy (starting

=25°C, I

= I

; V

=50)

110

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