IL350, IL358

www.vishay.com

Vishay Semiconductors

Rev. 1.5, 09-Nov-12

2

Document Number: 83623

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

Note

• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering

evaluations. Typical values are for information only and are not part of the testing requirements.

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

3V

Forward current

30

mA

Surge current

Pulse width < 10 ms

150

mA

Power dissipation

150

mW

Derate linearly from 25 °C

2mW/°C

OUTPUT

Reverse voltage

15

V

Power dissipation

50

mW

Derate linearly from 25 °C

0.65

mW/°C

Junction temperature

100

°C

COUPLER

Isolation test voltage

t = 1 s

3000

Total package power dissipation

250

mW

Derate linearly from 25 °C

2.8

mW/°C

Storage temperature range

- 40 to + 150

°C

Operating temperature

75

°C

Lead soldering time at 260 °C

10

s

Isolation resistance

Ω

Ω

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

1.8

2.1

V

Reverse current

0.01

10

μA

- 2.2

mW/°C

Junction capacitance

15

pF

Dynamic resistance

6

Ω

Switching time IL358/359

40

ns

40

ns

OUTPUT

Junction capacitance

12

pF

NEP

W/

√Hz

COUPLER

Capacitance (input to output)

1pF

Common mode capacitance

0.5

pF