20

AmMCL00XA

PR EL IMIN A R Y

Table 11.

Hardware Sequence Flags

Notes:

1. Performing successive read operations from the erase-suspended sector will cause D2 to toggle.

2. Performing successive read operations from any address will cause D6 to toggle.

3. Reading the byte address being programmed while in the erase-suspend program mode will indicate logic “1” at the D2 bit.

However, successive reads from the erase-suspended sector will cause D2 to toggle.

BUSY# (RY/BY#—Ready/Busy)

The BUSY# signal indicates to the host the status of

operations within the Miniature Card. The BUSY#

signal is tied to the components’ RY/BY# pins.

The RY/BY# signal from AMD Flash devices in

the Miniature Card indicate that the Embedded Algo-

rithms are either in progress or have been completed.

If the output is low, the device is busy with either a

program or erase operation. If the output is high, the

device is ready to accept any read/write or erase op-

eration. When the RY/BY# pin is low, the device will

not accept any additional program or erase com-

mands with the exception of the Erase Suspend com-

mand. If a Flash device is placed in an Erase

Suspend mode, the RY/BY# output will be high. Refer

to the section “Sector Erase Suspend” for more infor-

mation.

WORD-WIDE PROGRAMMING

The Word-Wide Programming sequence will be as

usual per Table 5. The Program word command is

A0A0H. Each byte is independently programmed. For

example, if the high byte of the word indicates

the successful completion of programming via one of

its write status bits such as D15, software polling

should continue to monitor the low byte for write com-

pletion and data verification, or vice versa. During the

Embedded Programming operations the device exe-

cutes programming pulses in 9

µs increments.

WORD-WIDE SECTOR ERASING

The Word-Wide Sector Erasing of a memory device

pair is similar to word-wide programming. The erase

word command is a six-bus-cycle command sequence

(see Table 5). Each sector is independently erased and

verified. Word-wide erasure reduces total erase time

when compared to byte erasure. Each Flash memory

device in the card may erase at different rates. There-

fore, each device (byte) must be verified separately.

Status

D7

D6

D5

D3

D2

In Progress

Byte Program in Embedded Program Algorithm

D7

Toggle

0

0

1

Embedded Erase Algorithm

0

Toggle

0

1

Toggle

Erase Suspended Mode

Erase Suspend Read

(Erase Suspended Sector)

11

00

Toggle

(Note 1)

Erase Suspend Read

(Non-Erase Suspended Sector)

Data

Data

Data

Data

Data

Erase Suspend Program

(Non-Erase Suspended Sector)

D7

Toggle

(Note 2)

01

1

(Note 3)

Exceeded

Time Limits

Byte Program in Embedded Program Algorithm

D7

Toggle

1

0

1

Program/Erase in Embedded Erase Algorithm

0

Toggle

1

1

N/A

Erase Suspended Mode

Erase Suspend Program

(Non-Erase Suspended Sector)

D7

Toggle

1

1

N/A