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CD00191174 Datasheet(PDF) 55 Page - STMicroelectronics |
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CD00191174 Datasheet(HTML) 55 Page - STMicroelectronics |
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55 / 112 page ![]() STM32F101xC, STM32F101xD, STM32F101xE Electrical characteristics Doc ID 14610 Rev 8 55/112 Low-speed internal (LSI) RC oscillator Wakeup time from low-power mode The wakeup times given in Table 27 are measured on a wakeup phase with an 8-MHz HSI RC oscillator. The clock source used to wake up the device depends from the current operating mode: ● Stop or Standby mode: the clock source is the RC oscillator ● Sleep mode: the clock source is the clock that was set before entering Sleep mode. All timings are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 10. 2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the ST website www.st.com. 3. Guaranteed by design, not tested in production. 4. Based on characterization, not tested in production. Table 26. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = –40 to 85 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI (2) 2. Based on characterization, not tested in production. Frequency 30 40 60 kHz tsu(LSI) (3) 3. Guaranteed by design, not tested in production. LSI oscillator startup time 85 µs IDD(LSI) (3) LSI oscillator power consumption 0.65 1.2 µA Table 27. Low-power mode wakeup timings Symbol Parameter Typ Unit tWUSLEEP (1) 1. The wakeup times are measured from the wakeup event to the point at which the user application code reads the first instruction. Wakeup from Sleep mode 1.8 µs tWUSTOP (1) Wakeup from Stop mode (regulator in run mode) 3.6 µs Wakeup from Stop mode (regulator in low-power mode) 5.4 tWUSTDBY (1) Wakeup from Standby mode 50 µs |
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