STF12NK65Z datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STF12NK65Z

4/12

Doc ID 18060 Rev 1

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID =1 mA, VGS = 0

650

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = max rating

VDS = max rating, TC = 125°C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

± 10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

33.75

4.5

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID =10 A

0.57

0.7

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS = 15 V, ID = 5 A

9.5

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

1837

208

48.8

Coss eq.

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Equivalent output

capacitance

VDS =0, VDS = 0 to 520 V

122

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 325 V, ID = 5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 14)

11.5

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 520 V, ID = 10 A,

VGS = 10 V

(see Figure 15)

62.6

9.6

Intrinsic gate resistance

f = 1 MHz open drain

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